Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
UF6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Number of Elements per Chip
1
Latime
2mm
Lungime
1.7mm
Typical Gate Charge @ Vgs
16.8 nC @ 4 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.7mm
Tara de origine
Thailand
€ 28,00
€ 0,28 Buc. (Livrat pe rola) (fara TVA)
€ 33,32
€ 0,333 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 28,00
€ 0,28 Buc. (Livrat pe rola) (fara TVA)
€ 33,32
€ 0,333 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 475 | € 0,28 | € 7,00 |
500 - 975 | € 0,25 | € 6,25 |
1000+ | € 0,21 | € 5,25 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Tip pachet
UF6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
66 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Number of Elements per Chip
1
Latime
2mm
Lungime
1.7mm
Typical Gate Charge @ Vgs
16.8 nC @ 4 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.7mm
Tara de origine
Thailand