Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Serie
NexFET
Tip pachet
VSON-CLIP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
3.4mm
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Detalii produs
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 3,25
€ 0,65 Buc. (Livrat pe rola) (fara TVA)
€ 3,87
€ 0,774 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 3,25
€ 0,65 Buc. (Livrat pe rola) (fara TVA)
€ 3,87
€ 0,774 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Serie
NexFET
Tip pachet
VSON-CLIP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
3.4mm
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Detalii produs