Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Serie
STripFET
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
84 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Temperatura minima de lucru
-50 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 21,20
€ 4,24 Each (Supplied in a Tube) (fara TVA)
€ 25,23
€ 5,05 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 21,20
€ 4,24 Each (Supplied in a Tube) (fara TVA)
€ 25,23
€ 5,05 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
5 - 9 | € 4,24 |
10 - 24 | € 3,78 |
25 - 49 | € 3,36 |
50+ | € 3,17 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Serie
STripFET
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
84 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Temperatura minima de lucru
-50 °C
Detalii produs