Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Serie
RRR040P03
Tip pachet
TSMT-3
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.85mm
Forward Diode Voltage
1.2V
Detalii produs
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 29,00
€ 0,29 Buc. (Livrat pe rola) (fara TVA)
€ 35,09
€ 0,351 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 29,00
€ 0,29 Buc. (Livrat pe rola) (fara TVA)
€ 35,09
€ 0,351 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 180 | € 0,29 | € 5,80 |
200 - 480 | € 0,28 | € 5,60 |
500 - 980 | € 0,27 | € 5,40 |
1000+ | € 0,26 | € 5,20 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Serie
RRR040P03
Tip pachet
TSMT-3
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.85mm
Forward Diode Voltage
1.2V
Detalii produs