Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.2mm
Automotive Standard
AEC-Q101
Tara de origine
Philippines
€ 9,44
€ 2,36 Buc. (Intr-un pachet de 4) (fara TVA)
€ 11,23
€ 2,808 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
€ 9,44
€ 2,36 Buc. (Intr-un pachet de 4) (fara TVA)
€ 11,23
€ 2,808 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
4 - 36 | € 2,36 | € 9,44 |
40 - 396 | € 2,02 | € 8,08 |
400 - 1996 | € 1,73 | € 6,92 |
2000+ | € 1,51 | € 6,04 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
252 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
134 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.2mm
Automotive Standard
AEC-Q101
Tara de origine
Philippines