Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
188 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
15.75mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.28mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.82mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 16,35
€ 3,27 Buc. (Intr-un pachet de 5) (fara TVA)
€ 19,46
€ 3,891 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 16,35
€ 3,27 Buc. (Intr-un pachet de 5) (fara TVA)
€ 19,46
€ 3,891 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
188 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
15.75mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.28mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.82mm
Temperatura minima de lucru
-55 °C
Detalii produs