Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
11.4 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
4mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 3,60
€ 0,36 Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,36
€ 0,436 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 3,60
€ 0,36 Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,36
€ 0,436 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
11.4 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
4mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Detalii produs