Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Latime
3.9mm
Lungime
4.9mm
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.57mm
Detalii produs
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 2.100,00
€ 0,84 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.499,00
€ 1,00 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.100,00
€ 0,84 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.499,00
€ 1,00 Buc. (Pe o rola de 2500) (cu TVA)
2500
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Latime
3.9mm
Lungime
4.9mm
Typical Gate Charge @ Vgs
12.9 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.57mm
Detalii produs
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.