Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
€ 6,48
€ 2,16 Buc. (Intr-un pachet de 3) (fara TVA)
€ 7,71
€ 2,57 Buc. (Intr-un pachet de 3) (cu TVA)
Standard
3
€ 6,48
€ 2,16 Buc. (Intr-un pachet de 3) (fara TVA)
€ 7,71
€ 2,57 Buc. (Intr-un pachet de 3) (cu TVA)
Standard
3
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
3 - 27 | € 2,16 | € 6,48 |
30 - 72 | € 1,97 | € 5,91 |
75 - 147 | € 1,83 | € 5,49 |
150 - 297 | € 1,67 | € 5,01 |
300+ | € 1,52 | € 4,56 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs