Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
246 A
Maximum Drain Source Voltage
75 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
271 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 30,30
€ 3,03 Buc. (Livrat pe rola) (fara TVA)
€ 36,06
€ 3,606 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 30,30
€ 3,03 Buc. (Livrat pe rola) (fara TVA)
€ 36,06
€ 3,606 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 18 | € 3,03 | € 6,06 |
20 - 48 | € 2,70 | € 5,40 |
50 - 98 | € 2,41 | € 4,82 |
100+ | € 2,26 | € 4,52 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
246 A
Maximum Drain Source Voltage
75 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
271 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.