Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
75 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
79 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.65mm
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 11,35
€ 2,27 Buc. (Intr-un pachet de 5) (fara TVA)
€ 13,51
€ 2,701 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 11,35
€ 2,27 Buc. (Intr-un pachet de 5) (fara TVA)
€ 13,51
€ 2,701 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,27 | € 11,35 |
25 - 45 | € 2,14 | € 10,70 |
50 - 120 | € 2,03 | € 10,15 |
125 - 245 | € 1,88 | € 9,40 |
250+ | € 1,75 | € 8,75 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
75 V
Serie
HEXFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
79 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.65mm
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.