Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
274 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
4.83mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 4,62
€ 2,31 Buc. (Intr-un pachet de 2) (fara TVA)
€ 5,50
€ 2,749 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 4,62
€ 2,31 Buc. (Intr-un pachet de 2) (fara TVA)
€ 5,50
€ 2,749 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 18 | € 2,31 | € 4,62 |
20 - 48 | € 2,04 | € 4,08 |
50 - 98 | € 1,91 | € 3,82 |
100 - 198 | € 1,75 | € 3,50 |
200+ | € 1,60 | € 3,20 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Serie
StrongIRFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
274 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
4.83mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Detalii produs
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.