Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.18 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
3.6 nC @ 4.5 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
50
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
1.18 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
3.6 nC @ 4.5 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China