Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
250 V
Tip pachet
SOT-89
Serie
SIPMOS®
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.5mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
4.9 nC @ 10 V
Latime
2.5mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 4,00
€ 0,40 Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,76
€ 0,476 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 4,00
€ 0,40 Buc. (Intr-un pachet de 10) (fara TVA)
€ 4,76
€ 0,476 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,40 | € 4,00 |
100 - 240 | € 0,38 | € 3,80 |
250 - 490 | € 0,37 | € 3,70 |
500 - 990 | € 0,34 | € 3,40 |
1000+ | € 0,31 | € 3,10 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
250 V
Tip pachet
SOT-89
Serie
SIPMOS®
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.5mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
4.9 nC @ 10 V
Latime
2.5mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.