Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 15 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 4,40
€ 0,22 Buc. (Livrat pe rola) (fara TVA)
€ 5,24
€ 0,262 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 4,40
€ 0,22 Buc. (Livrat pe rola) (fara TVA)
€ 5,24
€ 0,262 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
185 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Typical Gate Charge @ Vgs
1.7 nC @ 15 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Detalii produs