Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Latime
6.22mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 9,30
€ 0,93 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,25
€ 1,125 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 9,30
€ 0,93 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,25
€ 1,125 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Latime
6.22mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Detalii produs