Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Tip pachet
PW Mold2
Serie
2SK
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
2.3mm
Inaltime
5.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
Japan
Detalii produs
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
€ 6,00
€ 0,30 Buc. (Intr-un pachet de 20) (fara TVA)
€ 7,14
€ 0,357 Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 6,00
€ 0,30 Buc. (Intr-un pachet de 20) (fara TVA)
€ 7,14
€ 0,357 Buc. (Intr-un pachet de 20) (cu TVA)
20
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 40 | € 0,30 | € 6,00 |
60 - 100 | € 0,26 | € 5,20 |
120 - 220 | € 0,22 | € 4,40 |
240 - 460 | € 0,22 | € 4,40 |
480+ | € 0,21 | € 4,20 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Tip pachet
PW Mold2
Serie
2SK
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
2.3mm
Inaltime
5.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
Japan
Detalii produs