Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-220FP
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
16.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 3,30
€ 0,66 Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,93
€ 0,785 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 3,30
€ 0,66 Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,93
€ 0,785 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 0,66 | € 3,30 |
10 - 95 | € 0,55 | € 2,75 |
100 - 495 | € 0,46 | € 2,30 |
500 - 995 | € 0,44 | € 2,20 |
1000+ | € 0,43 | € 2,15 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Tip pachet
TO-220FP
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
16.4mm
Temperatura minima de lucru
-55 °C
Detalii produs