Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Inaltime
16.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 12,25
€ 2,45 Buc. (Intr-un pachet de 5) (fara TVA)
€ 14,58
€ 2,916 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 12,25
€ 2,45 Buc. (Intr-un pachet de 5) (fara TVA)
€ 14,58
€ 2,916 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 2,45 | € 12,25 |
10 - 95 | € 2,05 | € 10,25 |
100 - 495 | € 1,63 | € 8,15 |
500 - 995 | € 1,44 | € 7,20 |
1000+ | € 1,33 | € 6,65 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
66 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Inaltime
16.4mm
Temperatura minima de lucru
-55 °C
Detalii produs