Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Latime
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Temperatura maxima de lucru
+175 °C
Lungime
6.7mm
Temperatura minima de lucru
-55 °C
Inaltime
1.65mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 5,90
€ 0,59 Buc. (Intr-un pachet de 10) (fara TVA)
€ 7,02
€ 0,702 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 5,90
€ 0,59 Buc. (Intr-un pachet de 10) (fara TVA)
€ 7,02
€ 0,702 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Latime
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Temperatura maxima de lucru
+175 °C
Lungime
6.7mm
Temperatura minima de lucru
-55 °C
Inaltime
1.65mm
Detalii produs