Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Latime
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
7.8 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Inaltime
16.51mm
Temperatura minima de lucru
-65 °C
Detalii produs
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 7,60
€ 1,52 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,04
€ 1,809 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 7,60
€ 1,52 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,04
€ 1,809 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Latime
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
7.8 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Inaltime
16.51mm
Temperatura minima de lucru
-65 °C
Detalii produs
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.