Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
160 A
Maximum Drain Source Voltage
30 V
Serie
HEXFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
135 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
39 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.39mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 5,30
€ 0,53 Buc. (Intr-un pachet de 10) (fara TVA)
€ 6,31
€ 0,631 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 5,30
€ 0,53 Buc. (Intr-un pachet de 10) (fara TVA)
€ 6,31
€ 0,631 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
160 A
Maximum Drain Source Voltage
30 V
Serie
HEXFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.35V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
135 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
39 nC @ 4.5 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.39mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Detalii produs
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.