Documente tehnice
Specificatii
Marca
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Serie
IRF7343PbF
Tip pachet
SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Latime
4mm
Lungime
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.5mm
€ 2,90
€ 0,29 Buc. (Livrat pe rola) (fara TVA)
€ 3,45
€ 0,345 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 2,90
€ 0,29 Buc. (Livrat pe rola) (fara TVA)
€ 3,45
€ 0,345 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Serie
IRF7343PbF
Tip pachet
SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Latime
4mm
Lungime
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.5mm