Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ P6
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
16.13mm
Latime
5.21mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Forward Diode Voltage
0.9V
Inaltime
21.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 17,35
€ 3,47 Buc. (Intr-un pachet de 5) (fara TVA)
€ 20,65
€ 4,129 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 17,35
€ 3,47 Buc. (Intr-un pachet de 5) (fara TVA)
€ 20,65
€ 4,129 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 3,47 | € 17,35 |
25 - 45 | € 2,75 | € 13,75 |
50 - 120 | € 2,52 | € 12,60 |
125 - 245 | € 2,33 | € 11,65 |
250+ | € 2,14 | € 10,70 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Serie
CoolMOS™ P6
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
16.13mm
Latime
5.21mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Forward Diode Voltage
0.9V
Inaltime
21.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.