Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Serie
OptiMOS™ 3
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.57mm
Lungime
10.36mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
15.95mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 59,00
€ 1,18 Each (In a Tube of 50) (fara TVA)
€ 70,21
€ 1,404 Each (In a Tube of 50) (cu TVA)
50
€ 59,00
€ 1,18 Each (In a Tube of 50) (fara TVA)
€ 70,21
€ 1,404 Each (In a Tube of 50) (cu TVA)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,18 | € 59,00 |
100 - 200 | € 1,10 | € 55,00 |
250+ | € 1,04 | € 52,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Serie
OptiMOS™ 3
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.57mm
Lungime
10.36mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
15.95mm
Tara de origine
China
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.