Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK-7
Serie
OptiMOS™ 3
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.31mm
Typical Gate Charge @ Vgs
206 nC @ 10 V
Latime
9.45mm
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 3,86
€ 3,86 Buc. (fara TVA)
€ 4,59
€ 4,59 Buc. (cu TVA)
Standard
1
€ 3,86
€ 3,86 Buc. (fara TVA)
€ 4,59
€ 4,59 Buc. (cu TVA)
Standard
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 9 | € 3,86 |
10 - 24 | € 3,32 |
25 - 49 | € 3,08 |
50 - 99 | € 2,85 |
100+ | € 2,59 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK-7
Serie
OptiMOS™ 3
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.31mm
Typical Gate Charge @ Vgs
206 nC @ 10 V
Latime
9.45mm
Inaltime
4.57mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.