Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
720 A
Maximum Drain Source Voltage
3300 V
Tip pachet
Tray
Serie
XHP
Montare
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
P.O.A.
Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray Infineon FF2600UXTR33T2M1BPSA1
1
P.O.A.
Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray Infineon FF2600UXTR33T2M1BPSA1
Informatii indisponibile despre stoc
1
Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
720 A
Maximum Drain Source Voltage
3300 V
Tip pachet
Tray
Serie
XHP
Montare
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany