Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
1.8 kA
Maximum Drain Source Voltage
1700 V
Tip pachet
Tray
Serie
XHP
Timp montare
Screw Mount
Channel Mode
Depletion
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Informatii indisponibile despre stoc
€ 1.631,80
€ 1.631,80 Buc. (fara TVA)
€ 1.941,84
€ 1.941,84 Buc. (cu TVA)
Dual SiC Dual N-Channel MOSFET, 1.8 kA, 1700 V Depletion Tray Infineon FF1800XTR17T2P5BPSA1
1
€ 1.631,80
€ 1.631,80 Buc. (fara TVA)
€ 1.941,84
€ 1.941,84 Buc. (cu TVA)
Dual SiC Dual N-Channel MOSFET, 1.8 kA, 1700 V Depletion Tray Infineon FF1800XTR17T2P5BPSA1
Informatii indisponibile despre stoc
1
Documente tehnice
Specificatii
Marca
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
1.8 kA
Maximum Drain Source Voltage
1700 V
Tip pachet
Tray
Serie
XHP
Timp montare
Screw Mount
Channel Mode
Depletion
Number of Elements per Chip
2
Transistor Material
SiC
Tara de origine
Germany