N-channel MOSFET,IRF630 9A 200V 50pcs
Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Inaltime
9.15mm
Latime
4.6mm
Detalii produs
Molex BEAU Series Power Connectors
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P.O.A.
1
P.O.A.
1
Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Inaltime
9.15mm
Latime
4.6mm
Detalii produs
Molex BEAU Series Power Connectors