Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
800 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
51 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.16mm
Latime
4.7mm
Serie
QFET
Temperatura minima de lucru
-55 °C
Inaltime
15.87mm
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
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Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
800 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
51 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.16mm
Latime
4.7mm
Serie
QFET
Temperatura minima de lucru
-55 °C
Inaltime
15.87mm