Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
13.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 60,00
€ 1,20 Buc. (Livrat pe rola) (fara TVA)
€ 71,40
€ 1,428 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 60,00
€ 1,20 Buc. (Livrat pe rola) (fara TVA)
€ 71,40
€ 1,428 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 245 | € 1,20 | € 6,00 |
250 - 495 | € 1,07 | € 5,35 |
500 - 1245 | € 1,00 | € 5,00 |
1250+ | € 0,93 | € 4,65 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
13.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Latime
4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs