Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
345 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 3,90
€ 0,39 Buc. (Livrat pe rola) (fara TVA)
€ 4,72
€ 0,472 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 3,90
€ 0,39 Buc. (Livrat pe rola) (fara TVA)
€ 4,72
€ 0,472 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
345 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Detalii produs