Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7,25
€ 1,45 Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,63
€ 1,726 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 7,25
€ 1,45 Buc. (Intr-un pachet de 5) (fara TVA)
€ 8,63
€ 1,726 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 1,45 | € 7,25 |
50 - 120 | € 1,22 | € 6,10 |
125 - 245 | € 1,13 | € 5,65 |
250 - 495 | € 1,06 | € 5,30 |
500+ | € 0,98 | € 4,90 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Latime
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.41mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.01mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs