Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Serie
TK
Tip pachet
TO-220SIS
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
15mm
Tara de origine
China
Detalii produs
MOSFET Transistors, Toshiba
€ 12,32
€ 3,08 Buc. (Intr-un pachet de 4) (fara TVA)
€ 14,66
€ 3,665 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
€ 12,32
€ 3,08 Buc. (Intr-un pachet de 4) (fara TVA)
€ 14,66
€ 3,665 Buc. (Intr-un pachet de 4) (cu TVA)
Standard
4
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
4 - 16 | € 3,08 | € 12,32 |
20 - 76 | € 2,55 | € 10,20 |
80 - 196 | € 2,21 | € 8,84 |
200 - 396 | € 2,07 | € 8,28 |
400+ | € 2,00 | € 8,00 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Serie
TK
Tip pachet
TO-220SIS
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
15mm
Tara de origine
China
Detalii produs