Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Lungime
10.4mm
Latime
4.6mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
82 nC @ 10 V
Inaltime
15.75mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 198,00
€ 7,92 Each (Supplied in a Tube) (fara TVA)
€ 235,62
€ 9,425 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
25
€ 198,00
€ 7,92 Each (Supplied in a Tube) (fara TVA)
€ 235,62
€ 9,425 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
25
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
25 - 45 | € 7,92 | € 39,60 |
50+ | € 7,05 | € 35,25 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Lungime
10.4mm
Latime
4.6mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
82 nC @ 10 V
Inaltime
15.75mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.