Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220FP
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Inaltime
16.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 78,50
€ 1,57 Each (In a Tube of 50) (fara TVA)
€ 94,98
€ 1,90 Each (In a Tube of 50) (cu TVA)
50
€ 78,50
€ 1,57 Each (In a Tube of 50) (fara TVA)
€ 94,98
€ 1,90 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,57 | € 78,50 |
100 - 450 | € 1,22 | € 61,00 |
500 - 950 | € 1,01 | € 50,50 |
1000 - 4950 | € 0,84 | € 42,00 |
5000+ | € 0,78 | € 39,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220FP
Serie
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Inaltime
16.4mm
Temperatura minima de lucru
-55 °C
Detalii produs