Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Latime
4.6mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 101,00
€ 2,02 Each (In a Tube of 50) (fara TVA)
€ 120,19
€ 2,404 Each (In a Tube of 50) (cu TVA)
50
€ 101,00
€ 2,02 Each (In a Tube of 50) (fara TVA)
€ 120,19
€ 2,404 Each (In a Tube of 50) (cu TVA)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,02 | € 101,00 |
100 - 450 | € 1,56 | € 78,00 |
500 - 950 | € 1,31 | € 65,50 |
1000 - 4950 | € 1,08 | € 54,00 |
5000+ | € 1,01 | € 50,50 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Latime
4.6mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.3mm
Temperatura minima de lucru
-55 °C
Detalii produs