Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Serie
STripFET F7
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
0.95mm
Forward Diode Voltage
1.2V
Tara de origine
China
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
€ 14,00
€ 1,40 Buc. (Intr-un pachet de 10) (fara TVA)
€ 16,66
€ 1,666 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 14,00
€ 1,40 Buc. (Intr-un pachet de 10) (fara TVA)
€ 16,66
€ 1,666 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 1,40 | € 14,00 |
20+ | € 1,31 | € 13,10 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Serie
STripFET F7
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
0.95mm
Forward Diode Voltage
1.2V
Tara de origine
China
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.