Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Tip pachet
M174
Timp montare
Surface Mount
Numar pini
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
26.67mm
Temperatura maxima de lucru
+200 °C
Inaltime
4.11mm
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 85,23
€ 85,23 Buc. (fara TVA)
€ 101,42
€ 101,42 Buc. (cu TVA)
Standard
1
€ 85,23
€ 85,23 Buc. (fara TVA)
€ 101,42
€ 101,42 Buc. (cu TVA)
Standard
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 4 | € 85,23 |
5 - 9 | € 82,73 |
10+ | € 79,41 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Tip pachet
M174
Timp montare
Surface Mount
Numar pini
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
26.67mm
Temperatura maxima de lucru
+200 °C
Inaltime
4.11mm
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.