Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Serie
MegaFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
125 nC @ 20 V
Temperatura maxima de lucru
+175 °C
Inaltime
9.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 87,50
€ 1,75 Each (In a Tube of 50) (fara TVA)
€ 104,12
€ 2,082 Each (In a Tube of 50) (cu TVA)
50
€ 87,50
€ 1,75 Each (In a Tube of 50) (fara TVA)
€ 104,12
€ 2,082 Each (In a Tube of 50) (cu TVA)
50
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,75 | € 87,50 |
100 - 450 | € 1,47 | € 73,50 |
500 - 950 | € 1,27 | € 63,50 |
1000+ | € 1,22 | € 61,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Serie
MegaFET
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.67mm
Typical Gate Charge @ Vgs
125 nC @ 20 V
Temperatura maxima de lucru
+175 °C
Inaltime
9.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.