Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
378 A
Maximum Drain Source Voltage
40 V
Serie
NTMFS5C404N
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
700 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Lungime
6.1mm
Typical Gate Charge @ Vgs
128 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 57,30
€ 5,73 Buc. (Livrat pe rola) (fara TVA)
€ 69,33
€ 6,93 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 57,30
€ 5,73 Buc. (Livrat pe rola) (fara TVA)
€ 69,33
€ 6,93 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar |
---|---|
10 - 99 | € 5,73 |
100 - 499 | € 4,92 |
500 - 999 | € 4,28 |
1000+ | € 3,86 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
378 A
Maximum Drain Source Voltage
40 V
Serie
NTMFS5C404N
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
700 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Lungime
6.1mm
Typical Gate Charge @ Vgs
128 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Detalii produs