Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Latime
9.2mm
Transistor Material
Si
Inaltime
4.5mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Intr-un pachet de 2) (fara TVA)
Standard
2
P.O.A.
Buc. (Intr-un pachet de 2) (fara TVA)
Standard
2
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Latime
9.2mm
Transistor Material
Si
Inaltime
4.5mm
Detalii produs