Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.01mm
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Standard
50
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Standard
50
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.01mm