Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
4.1mm
Number of Elements per Chip
1
Lungime
5mm
Transistor Material
Si
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
€ 7,60
€ 1,52 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,04
€ 1,809 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 7,60
€ 1,52 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,04
€ 1,809 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
1.65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
78 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
4.1mm
Number of Elements per Chip
1
Lungime
5mm
Transistor Material
Si
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs