Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.2mm
Temperatura maxima de lucru
+150 °C
Latime
4.19mm
Inaltime
5.33mm
Temperatura minima de lucru
-55 °C
Detalii produs
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 12,00
€ 0,60 Buc. (Intr-un pachet de 20) (fara TVA)
€ 14,28
€ 0,714 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 12,00
€ 0,60 Buc. (Intr-un pachet de 20) (fara TVA)
€ 14,28
€ 0,714 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 20 | € 0,60 | € 12,00 |
40 - 80 | € 0,56 | € 11,20 |
100+ | € 0,50 | € 10,00 |
Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.2mm
Temperatura maxima de lucru
+150 °C
Latime
4.19mm
Inaltime
5.33mm
Temperatura minima de lucru
-55 °C
Detalii produs
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.