Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.826mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.7mm
Temperatura maxima de lucru
+150 °C
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Detalii produs
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 8,85
€ 1,77 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,53
€ 2,106 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 8,85
€ 1,77 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,53
€ 2,106 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 1,77 | € 8,85 |
25 - 95 | € 1,70 | € 8,50 |
100+ | € 1,62 | € 8,10 |
Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.826mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.7mm
Temperatura maxima de lucru
+150 °C
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Detalii produs
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.