Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOT-227B
Timp montare
Screw Mount
Numar pini
4
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
600 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
360 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
38.2mm
Latime
25.07mm
Serie
HiperFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.6mm
P.O.A.
Impachetare pentru productie (Tub)
1
P.O.A.
Impachetare pentru productie (Tub)
1
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Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
150 V
Tip pachet
SOT-227B
Timp montare
Screw Mount
Numar pini
4
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
600 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
360 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
38.2mm
Latime
25.07mm
Serie
HiperFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.6mm