Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Tip pachet
TSOP-6
Serie
HEXFET
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
3mm
Temperatura maxima de lucru
+150 °C
Latime
1.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
3.9 nC @ 10 V
Inaltime
0.9mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 1,10
€ 0,11 Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,31
€ 0,131 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 1,10
€ 0,11 Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,31
€ 0,131 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
200 V
Tip pachet
TSOP-6
Serie
HEXFET
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
3mm
Temperatura maxima de lucru
+150 °C
Latime
1.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
3.9 nC @ 10 V
Inaltime
0.9mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.