Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Serie
CoolMOS™ P7
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
6.22mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.9V
Inaltime
2.41mm
Detalii produs
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 27,50
€ 0,55 Buc. (Livrat pe rola) (fara TVA)
€ 32,72
€ 0,654 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 27,50
€ 0,55 Buc. (Livrat pe rola) (fara TVA)
€ 32,72
€ 0,654 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
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Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 120 | € 0,55 | € 2,75 |
125 - 245 | € 0,52 | € 2,60 |
250 - 495 | € 0,48 | € 2,40 |
500+ | € 0,45 | € 2,25 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Serie
CoolMOS™ P7
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
6.22mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.9V
Inaltime
2.41mm
Detalii produs
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.