Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Serie
OptiMOS P
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
58 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 24,75
€ 0,99 Buc. (Intr-un pachet de 25) (fara TVA)
€ 29,45
€ 1,178 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 24,75
€ 0,99 Buc. (Intr-un pachet de 25) (fara TVA)
€ 29,45
€ 1,178 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 25 | € 0,99 | € 24,75 |
50 - 100 | € 0,76 | € 19,00 |
125 - 225 | € 0,71 | € 17,75 |
250 - 600 | € 0,65 | € 16,25 |
625+ | € 0,60 | € 15,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Serie
OptiMOS P
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
58 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.5mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.